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FQI4N80 Datasheet, MOSFET, Fairchild Semiconductor

FQI4N80 Datasheet, MOSFET, Fairchild Semiconductor

FQI4N80

datasheet Download (Size : 659.86KB)

FQI4N80 Datasheet
FQI4N80

datasheet Download (Size : 659.86KB)

FQI4N80 Datasheet

FQI4N80 Features and benefits

FQI4N80 Features and benefits


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* 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche teste.

FQI4N80 Description

FQI4N80 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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FQI4N80 Page 1 FQI4N80 Page 2 FQI4N80 Page 3

TAGS

FQI4N80
800V
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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